TPH1R712MD Power MOSFET (P-ch single)

数据手册DataSheet
产品概述
Application ScopeLithium-Ion secondary batteries / Notebook PCs
PolarityP-ch
GenerationU-MOSⅥ
RoHS Compatible Product(s) (#)Available
Assembly bases马来西亚
封装信息
Toshiba Package NameSOP Advance
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-60A
Power DissipationPD78W
Drain-Source voltageVDSS-20V
Drain-Source voltageVDSS-20V
产品特性
项目符号条件数值单位
Input capacitance (Typ.)Ciss-10900pF
Total gate charge (Typ.)Qg-91nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4.5V0.0017Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=2.5V0.0027Ω
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPH1R712MD,L1Q(MMalaysia5000yes
技术资料
PSpicePSpice Model[Jun,2016] NEW(lib: 3KB)
Reliability InformationReliability Data[Feb,2015](PDF: 161KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)