TPH6R30ANL Power MOSFET (N-ch single 60V《VDSS≤150V)

产品概述
Application ScopeHigh efficiency DC/DC converters / Switching regulators
PolarityN-ch
GenerationU-MOSⅧ-H
RoHS Compatible Product(s) (#)Available
Assembly bases马来西亚
封装信息
Toshiba Package NameSOP Advance
Pins8
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID66A
Power DissipationPD54W
Drain-Source voltageVDSS100V
Drain-Source voltageVDSS100V
产品特性
项目符号条件数值单位
Input capacitance (Typ.)Ciss-3300pF
Total gate charge (Typ.)Qg-55nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4.5V0.0103Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.0063Ω
技术资料
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)