TW069J120A Power SiC MOSFETs

产品概述
Application ScopeSwitching regulators
PolarityN-ch
RoHS Compatible Product(s) (#)Available
Assembly bases日本
封装信息
Package Image
Toshiba Package NameTO-3P(N)
JEITASC-65
Pins3
MountingThrough Hole
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID47A
Power DissipationPD272W
Drain-Source voltageVDSS1200V
Drain-Source voltageVDSS1200V
产品特性
项目符号条件数值单位
Input capacitance (Typ.)Ciss-1700pF
Total gate charge (Typ.)Qg-75nC
Drain-Source on-resistance (Max)RDS(ON)VGS=20V0.069Ω
技术资料
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
TTC0001