TSPF6200 High Power Infrared Emitting Diode, 890 nm, GaAlAs / Double Hetero

技术特性
  • Package type: leaded
  • Package form: T-1¾
  • Dimensions (in mm): Ø 5
Datasheet
TSPF6200 82425
TSPF6200 High Power Infrared Emitting Diode, 890 nm, GaAlAs/Double Hetero 82425
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