V10P6-M3, V10P6HM3 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.35 V at IF = 5 A

技术特性
  • Very low profile - typical height of 1.1 mm
  • Ideal for automated placement
  • Trench MOS Schottky technology
Datasheet
V10P6-M3, V10P6HM3 87711
V10P6-M3, V10P6HM3 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.35 V at IF = 5 A 87711