V10P8-M3, V10P8HM3 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.44 V at IF = 5 A _ BDTIC 中国领先电子元器件代理商

V10P8-M3, V10P8HM3 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.44 V at IF = 5 A

V10P8-M3

技术特性

Very low profile - typical height of 1.1 mm
Ideal for automated placement
Trench MOS Schottky technology

Datasheet

V10P8-M3, V10P8HM3

V10P8-M3, V10P8HM3 87712

V10P8-M3, V10P8HM3 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.44 V at IF = 5 A 87712

©1993 - 2024 BDTIC