VB30100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A _ BDTIC 中国领先电子元器件代理商

VB30100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

VB30100C-M3

Datasheet

VB30100C-M3

Markings

Diodes Group Body Marking - Marking

VB30100C-M3 87984

Diodes Group Body Marking 89174

VB30100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A 87984

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