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V10150S-E3, VF10150S-E3, VB10150S-E3, VI10150S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

技术特性

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation

Datasheet

• V10150S-E3, VF10150S-E3, VB10150S-E3, VI10150S-E3

Application Notes

• Application Note - Design Guidelines for Schottky Rectifiers
• Application Note - Fundamentals of Rectifiers
• Application Note - High Speed Data Line Protection - Low Current Bridges Rectifiers Lend Themselves to Data Line Protection
• Application Note - Physical Explanation
• Application Note - Power Factor Correction with Ultrafast Diodes
• Application Note - Rectifiers for Power-Factor-Correction (PFC)
• Application Note - SUPERRECTIFIER Design Brings New Level of Reliability to Surface Mount Components
• Application Note - Using Rectifiers in Voltage Multiplier Circuits

General Information

• Featured Product - TMBS® - Industry’s First Commercial TMBS® - Trench MOS Barrier Schottky Rectifier Series

Markings

• Diodes Group Body Marking - Marking

Packaging Information

• Packaging Information - Packaging Information