V10150C-E3, VF10150C-E3, VB10150C-E3, VI10150C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

技术特性
  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
Datasheet
Application Notes
Markings
Packaging Information
V10150C-E3, VF10150C-E3, VB10150C-E3, VI10150C-E3 89068
Application Note 88755
Application Note 88755
Application Note 88755
Application Note 88755
Application Note 88755
Application Note 88755
Application Note 88755
Diodes Group Body Marking 89174
Packaging Information 30205
V10150C-E3, VF10150C-E3, VB10150C-E3, VI10150C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier 89068