V20150CxM3, VI20150CxM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A _ BDTIC 中国领先电子元器件代理商

V20150CxM3, VI20150CxM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

V20150CxM3

技术特性

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation

Datasheet

V20150CxM3, VI20150CxM3

Markings

Diodes Group Body Marking - Marking

V20150CxM3, VI20150CxM3 89151

Diodes Group Body Marking 89174

V20150CxM3, VI20150CxM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A 89151

©1993 - 2024 BDTIC