V10150C, VI10150C Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A _ BDTIC 中国领先电子元器件代理商

V10150C, VI10150C Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

V10150C

技术特性

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation

Datasheet

V10150C, VI10150C

Markings

Diodes Group Body Marking - Marking

V10150C-E3, VF10150C-E3, VB10150C-E3, VI10150C-E3 89068

Diodes Group Body Marking 89174

V10150C, VI10150C Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A 89154

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