V60100C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A _ BDTIC 中国领先电子元器件代理商

V60100C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A

V60100C-M3

技术特性

Trench MOS Schottky t echnology
Low forward voltage drop, low power losses
High efficiency operation

Datasheet

V60100C-M3

Markings

Diodes Group Body Marking - Marking

V60100C-M3 89155

Diodes Group Body Marking 89174

V60100C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A 89155

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