V50100PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A _ BDTIC 中国领先电子元器件代理商

V50100PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

V50100PW

技术特性

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation

Datasheet

V50100PW

Markings

Diodes Group Body Marking - Marking

Diodes Group Body Marking 89174

V50100PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A 89181

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