V60200PGW Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
技术特性
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
Datasheet
Markings
- Diodes Group Body Marking - Marking
SPICE 3 Models (*.txt)
- V60200PGW - SPICE3
- V60200PGW 89184
