V40100G-M3/HM3, VI40100G-M3/HM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A _ BDTIC 中国领先电子元器件代理商

V40100G-M3/HM3, VI40100G-M3/HM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

V40100G-M3/HM3

技术特性

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation

Datasheet

V40100G-M3/HM3, VI40100G-M3/HM3

Markings

Diodes Group Body Marking - Marking

V40100G-M3/HM3, VI40100G-M3/HM3 89189

Diodes Group Body Marking 89174

V40100G-M3/HM3, VI40100G-M3/HM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A 89189

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