V20120S, VI20120S High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A _ BDTIC 中国领先电子元器件代理商

V20120S, VI20120S High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

V20120S

技术特性

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation

Datasheet

V20120S, VI20120S

Markings

Diodes Group Body Marking - Marking

V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3 88993

Diodes Group Body Marking 89174

V20120S, VI20120S High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A 89243

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