V20120SG, VI20120SG High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A _ BDTIC 中国领先电子元器件代理商

V20120SG, VI20120SG High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

V20120SG

技术特性

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation

Datasheet

V20120SG, VI20120SG

Markings

Diodes Group Body Marking - Marking

V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 88994

Diodes Group Body Marking 89174

V20120SG, VI20120SG High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A 89244

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