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VBT4045BP-E3 Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5 A

技术特性

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation

Datasheet

• VBT4045BP-E3

Markings

• Diodes Group Body Marking - Marking

Product Literature

• Selector Guide - 45 V Trench MOS Barrier Schottky Rectifiers for PV Solar ByPass Protection