VBT3045BP-E3 Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5 A _ BDTIC 中国领先电子元器件代理商

VBT3045BP-E3 Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5 A

VBT3045BP-E3

技术特性

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation

Datasheet

VBT3045BP-E3

Markings

Diodes Group Body Marking - Marking

Product Literature

Selector Guide - 45 V Trench MOS Barrier Schottky Rectifiers for PV Solar ByPass Protection

VBT3045BP-E3 89449

Diodes Group Body Marking 89174

Selector Guide 89441

VBT3045BP Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5 A 89449

©1993 - 2024 BDTIC