V20M120M-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 5 A _ BDTIC 中国领先电子元器件代理商

V20M120M-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 5 A

V20M120M-E3

技术特性

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation

Datasheet

V20M120M-E3

Markings

Diodes Group Body Marking - Marking

V20M120M-E3 89987

Diodes Group Body Marking 89174

V20M120M Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 5 A 89987

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