V30D45C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A

技术特性
  • Trench MOS Schottky technology
  • Very low profile - typical height of 1.7 mm
  • Ideal for automated placement
Datasheet
Markings
Product Literature
V30D45C 89994
Diodes Group Body Marking 89174
Product Overview 89016
Product Sheet 89997
Tradeshow Brochure 94878
V30D45C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A 89994