V30D60C Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

技术特性
  • Trench MOS Schottky technology
  • Very low profile - typical height of 1.7 mm
  • Ideal for automated placement
Datasheet
Markings
Product Literature
V30D60C 89995
Diodes Group Body Marking 89174
Product Overview 89016
Product Sheet 89997
Tradeshow Brochure 94878
V30D60C Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A 89995