IRFI740G, SiHFI740G Power MOSFET

技术特性
  • Isolated package
  • High voltage isolation = 2.5 kVRMS (t = 60 s;     f = 60 Hz)
  • Sink to lead creepage distance = 4.8 mm
Datasheet
Application Notes
General Information
RC Thermal Models
Reliability Data
IRFI740G, SiHFI740G 91156
Device Application Note AN1005 91051
General Information 91155
IRFI740GLC_RC, SiHFI740GLC_RC 91155
Package Reliability 91155
Silicon Technology Reliability 63402
IRFI740G, SiHFI740G Power MOSFET 91156