IRFI9610G, SiHFI9610G Power MOSFET

技术特性
  • Isolated Package
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s;     f = 60 Hz)
  • Sink to Lead Creepage Distance = 4.8 mm
Datasheet
General Information
RC Thermal Models
Reliability Data
IRFI9610G, SiHFI9610G 91165
General Information 91155
IRFI9610G_RC, SiHFI9610G_RC 91165
Package Reliability 91155
Silicon Technology Reliability 63402
IRFI9610G, SiHFI9610G Power MOSFET 91165