IRFI9630G, SiHFI9630G Power MOSFET
技术特性
- Isolated Package
- High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)
- Sink to Lead Creepage Distance = 4.8 mm
Datasheet
General Information
- General Information - Useful Web Links
RC Thermal Models
- IRFI9630G_RC, SiHFI9630G_RC - R-C Thermal Model Parameters
Reliability Data
- Package Reliability - Environmental and Package Testing Data for TO-220 FullPAK
- Silicon Technology Reliability - P-Channel Accelerated Operating Life Test Result
- IRFI9630G, SiHFI9630G 91167
- General Information 91155
- IRFI9630G_RC, SiHFI9630G_RC 91167
- Package Reliability 91155
- Silicon Technology Reliability 63402
- IRFI9630G, SiHFI9630G Power MOSFET 91167
