• 简体中文
• English

IRFIBC40GLC, SiHFIBC40GLC Power MOSFET

技术特性

• Isolated package
• High voltage isolation = 2.5 kVRMS (t = 60 s;     f = 60 Hz)
• Sink to lead creepage distance = 4.8 mm

Datasheet

• IRFIBC40GLC, SiHFIBC40GLC

Application Notes

• Device Application Note AN1005 - Power MOSFET Avalanche Design Guidelines

General Information

• General Information - Useful Web Links

Package Drawings

• Package Information - TO-220 FULLPAK (High Voltage)

RC Thermal Models

• IRFIBC40GLC_RC, SiHFIBC40GLC_RC - R-C Thermal Model Parameters

Reliability Data

• Package Reliability - Environmental and Package Testing Data for TO-220 FullPAK
• Silicon Technology Reliability - N-Channel Accelerated Operating Life Test Result