IRFIBC40G, SiHFIBC40G Power MOSFET
技术特性
- Isolated Package
- Low Thermal Resistance
- Sink to Lead Creepage Dist. = 4.8 mm
Datasheet
Application Notes
- Device Application Note AN1005 - Power MOSFET Avalanche Design Guidelines
General Information
- General Information - Useful Web Links
RC Thermal Models
- IRFIBC40G_RC, SiHFIBC40G_RC - R-C Thermal Model Parameters
Reliability Data
- Package Reliability - Environmental and Package Testing Data for TO-220 FullPAK
- Silicon Technology Reliability - N-Channel Accelerated Operating Life Test Result
- IRFIBC40G, SiHFIBC40G 91182
- Device Application Note AN1005 91051
- General Information 91155
- IRFIBC40GLC_RC, SiHFIBC40GLC_RC 91181
- Package Reliability 91155
- Silicon Technology Reliability 63402
- IRFIBC40G, SiHFIBC40G Power MOSFET 91182
