IRFIBF30G, SiHFIBF30G Power MOSFET

技术特性
  • Isolated Package
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s;     f = 60 Hz)
  • Sink to Lead Creepage Distance = 4.8 mm
Datasheet
Application Notes
General Information
RC Thermal Models
Reliability Data
IRFIBF30G, SiHFIBF30G 91186
Device Application Note AN1005 91051
General Information 91155
IRFIBF30G_RC, SiHFIBF30G_RC 91186
Package Reliability 91155
Silicon Technology Reliability 63402
IRFIBF30G, SiHFIBF30G Power MOSFET 91186