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VS-GT175DA120U Insulated Gate Bipolar Transistor (Trench IGBT), 175 A

技术特性

• Trench IGBT technology with positive temperature coefficient
• Square RBSOA
• 10 µs short circuit capability

Datasheet

• VS-GT175DA120U

Application Notes

• Application Note - Mounting Instructions for SOT-227 Modules

Package Drawings

• Outline Dimensions - SOT-227 Generation II

Packaging Information

• Packaging Information - SOT-227 Generation II

Product Literature

• Miscellaneous - IGBT Modules (600 V, 650 V and 1200 V, 50 A to 250 A) in SOT-227 Package
• Selector Guide - Power Modules: Standard Recovery Diode, Fast Recovery Diode, Schottky, Ultrafast, Thyristor, and IGBT
• Tradeshow Brochure - IGBT Power Modules