VS-GB200TS60NPbF INT-A-PAK "Half Bridge" (Ultrafast Speed IGBT), 209 A

技术特性
  • Generation 5 Non Punch Through (NPT) technology
  • Ultrafast: optimized for hard switching speed
  • Low VCE(on)
Datasheet
Application Notes
Package Drawings
Product Literature
  • Selector Guide - Power Modules: Standard Recovery Diode, Fast Recovery Diode, Schottky, Ultrafast, Thyristor, and IGBT
Published Articles
  • Article - High Power and Hybrid Vehicles Increase Demand for Load Dump Protection by Soo Man (Sweetman) Kim (Autoelectronics.com, Oct 16 2008)
Reference Data
VS-GB200TS60NPbF 94503
Application Note 95901
Outline Dimensions 94503
Selector Guide 93281
Article 94364
Optional Hardware 93281
VS-GB200TS60NPbF INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A 94503