• 简体中文
• English

VS-GB90DA60U Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 90 A

技术特性

• NPT warp 2 speed IGBT technology with positive temperature coefficient
• Square RBSOA
• HEXFRED® anti-parallel diodes with ultrasoft reverse recovery

Datasheet

• VS-GB90DA60U

Application Notes

• Application Note - Mounting Instructions for SOT-227 Modules

Package Drawings

• Outline Dimensions - SOT-227 Generation II

Packaging Information

• Packaging Information - SOT-227 Generation II

Product Literature

• Miscellaneous - IGBT Modules (600 V, 650 V and 1200 V, 50 A to 250 A) in SOT-227 Package
• Selector Guide - Power Modules: Standard Recovery Diode, Fast Recovery Diode, Schottky, Ultrafast, Thyristor, and IGBT
• Tradeshow Brochure - IGBT Power Modules