光敏管 - Leaded Devices vishay _ BDTIC 中国领先电子元器件代理商

光敏管 - Leaded Devices vishay

Part Number	Device Type	Package Type	Package Form	Package Dimensions L x W x H (mm)	Peak Wavelength λp (nm)	Spectral Bandwidth(1) (nm)	Output Current(2)	Angle of Half Sensitivity φ (±deg)	Photo Sensitive Area (mm2)
BPV10	Silicon PIN Photodiode	leaded	T-1¾	Ø 5	920	380 to 1100	70 µA	20	0.78
BPV10NF	Silicon PIN Photodiode	leaded	T-1¾	Ø 5	940	790 to 1050	60 µA	20	0.78
BPW20RF	Silicon Photodiode, RoHS Compliant	leaded	TO-5	Ø 8.13	920	400 to 1100	60 µA	50	7.5
BPW21R	Silicon Photodiode	leaded	TO-5	Ø 8.13	565	420 to 675	9 µA	50	7.5
BPW46	Silicon PIN Photodiode	leaded	Side view	5 x 3 x 6.4	900	430 to 1100	50 µA	65	7.5
BPW76A	Silicon NPN Phototransistor, RoHS Compliant	leaded	TO-18	Ø 4.7	850	450 to 1080	0.4 mA to 0.8 mA	40
BPW76B	Silicon NPN Phototransistor, RoHS Compliant	leaded	TO-18	Ø 4.7	850	450 to 1080	> 0.6 mA	40
BPW83	Silicon PIN Photodiode, RoHS Compliant	leaded	Side view	5 x 3 x 6.4	950	790 to 1050	45 µA	65	7.5
BPW85	Silicon NPN Phototransistor	leaded	T-1	Ø 3	850	450 to 1080	0.8 mA to 8 mA	25
BPW85A	Silicon NPN Phototransistor	leaded	T-1	Ø 3	850	450 to 1080	0.8 mA to 2.5 mA	25
BPW85B	Silicon NPN Phototransistor	leaded	T-1	Ø 3	850	450 to 1080	1.5 mA to 4 mA	25
BPW85C	Silicon NPN Phototransistor	leaded	T-1	Ø 3	850	450 to 1080	3 mA to 8 mA	25
TEFD4300	Silicon PIN Photodiode	leaded	T-1	Ø 3	950	350 to 1120	17 µA	20
TEFD4300F	Silicon PIN Photodiode	leaded	T-1	Ø 3	950	770 to 1070	17 µA	20
TEFT4300	Silicon NPN Phototransistor	leaded	T-1	Ø 3	925	875 to 1000	3.2 mA	30
TEPT4400	Ambient Light Sensor	leaded	T-1	Ø 3	570	440 to 800	200 µA	30
TEPT5600	Ambient Light Sensor	leaded	T-1¾	Ø 5	570	440 to 800	630 µA	20
TEPT5700	Ambient Light Sensor	leaded	T-1¾	Ø 5	570	440 to 800	75 µA	50
TEST2600	Silicon NPN Phototransistor	leaded	Side view	3.6 x 2.2 x 3.4	920	850 to 980	2.5 mA	30
BPV11	Silicon NPN Phototransistor	leaded	T-1¾	Ø 5	850	450 to 1080	10 mA	15
BPV11F	Silicon NPN Phototransistor	leaded	T-1¾	Ø 5	930	900 to 980	9 mA	15
BPW16N	Silicon NPN Phototransistor	leaded	T-¾	Ø 1.8	825	450 to 1040	0.14 mA	40
BPW17N	Silicon NPN Phototransistor	leaded	T-¾	Ø 1.8	825	450 to 1040	1.0 mA	12
BPW77NA	Silicon NPN Phototransistor, RoHS Compliant	leaded	TO-18	Ø 4.7	850	450 to 1080	7.5 to 15 mA	10
BPW77NB	Silicon NPN Phototransistor, RoHS Compliant	leaded	TO-18	Ø 4.7	850	450 to 1080	> 10 mA	10
BPW96B	Silicon NPN Phototransistor	leaded	T-1¾	Ø 5	850	450 to 1080	2.5 to 7.5 mA	20
BPW96C	Silicon NPN Phototransistor	leaded	T-1¾	Ø 5	850	450 to 1080	4.5 to 15 mA	20
TEKT5400S	Silicon NPN Phototransistor	leaded	Side view lens	5 x 2.65 x 5	920	850 to 980	4 mA	37
BPV22F	Silicon PIN Photodiode	leaded	Side view	4.5 x 5 x 6	950	870 to 1050	80 µA	60	7.5
BPV22NF	Silicon PIN Photodiode	leaded	Side view Side view, long	4.5 x 5 x 6	940	790 to 1050	85 µA	60	7.5
BPV22NFL	Silicon PIN Photodiode	leaded	Side view, long leads	4.5 x 5 x 6	940	790 to 1050	85 µA	60	7.5
BPV23F	Silicon PIN Photodiode	leaded	Side view Side view, long	4.5 x 5 x 6	950	870 to 1050	63 µA	60	4.4
BPV23FL	Silicon PIN Photodiode	leaded	Side view, long leads	4.5 x 5 x 6	950	870 to 1050	63 µA	60	4.4
BPV23NF	Silicon PIN Photodiode	leaded	Side view Side view, long	4.5 x 5 x 6	940	790 to 1050	65 µA	60	4.4
BPV23NFL	Silicon PIN Photodiode	leaded	Side view, long leads	4.5 x 5 x 6	940	790 to 1050	65 µA	60	4.4
BPW24R	Silicon PIN Photodiode, RoHS Compliant	leaded	TO-18	Ø 4.7	900	400 to 1100	60 µA	12	TO-18
BPW34	Silicon PIN Photodiode	leaded	Top view Top view	5.4 x 4.3 x 3.2	900	430 to 1100	50 µA	65	7.5
BPW34S	Silicon PIN Photodiode	leaded	Top view	5.4 x 4.3 x 3.2	900	430 to 1100	50 µA	65	7.5
BPW41N	Silicon PIN Photodiode	leaded	Side view	5 x 4 x 6.8	950	870 to 1050	45 µA	65	7.5
BPW82	Silicon PIN Photodiode, RoHS Compliant	leaded	Side view	5 x 4 x 6.8	950	790 to 1050	45 µA	65	7.5