DataSheet:Power Semiconductor MG1275S BA1MM Datasheet
Littelfuse Half-Bridge Circuit IGBT Modules, available in industry-standard S, D, or WB packages with ratings up to 1200V and 600A, offer high efficiency and fast switching speeds by combining simple MOSFET gate-drive with the high current and low saturation voltage switching capability of bipolar transistors. Both standard and customized solutions are available to meet circuit designers’ exacting performance standards.
Features
Applications
| Catalog # | VCES (V) | VCE(sat) (V) | Eoff (mJ) | Package Type | Size | RthJC (K/W) | Topology | Ptot - (W) | UL Recognized File Number |
|---|---|---|---|---|---|---|---|---|---|
| MG1275S-BA1MM | 1200 | 1.8 | 4.9 | bulk | Package S: 94 x 34 x 30 (mm) | 0.2 | circuit B | 630 | E71639 |