• 简体中文
• English

TSHG5510 High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

Features

• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5

Datasheet

• TSHG5510

3D Models (*.zip)

• Opto 3D Models - Opto 3D Models

Product Literature

• Product Sheet - 830 nm, 850 nm, and 870 nm High Intensity Infrared Emitters