IRFI530G, SiHFI530G Power MOSFET

Features
  • Isolated Package
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
  • Sink to Lead Creepage Distance = 4.8 mm
Datasheet
Application Notes
General Information
RC Thermal Models
Reliability Data
PSpice Models (*.lib)
PSpice Models (*.olb)
IRFI530G, SiHFI530G 90180
Device Application Note AN1005 91051
Device Application Note AN949 91214
General Information 91155
IRFI530G_RC, SiHFI530G_RC 90180
Package Reliability 91155
Silicon Technology Reliability 63402
IRFI530G, SiHFI530G-P LIB 90180
IRFI530G, SiHFI530G-P OLB 90180
IRFI530G, SiHFI530G Power MOSFET 90180