技术特性

• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;     f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm

数据手册DataSheet 下载

• IRLI520G, SiHLI520G
• SiS414DN

Application Notes

• Application Note AN1005 - Power MOSFET Avalanche Design Guidelines
• Application Note AN949 - Current Rating of Power Semiconductors

General Information

• General Information - Useful Web Links

RC Thermal Models

• IRLI520G_RC, SiHLI520G_RC - R-C Thermal Model Parameters

Reliability Data

• Package Reliability - Environmental and Package Testing Data for TO-220 FullPAK
• Silicon Technology Reliability - N-Channel Accelerated Operating Life Test Result

IRLI520G, SiHLI520G 90397

SiS414DN 66588

SiS414DN-DS 66588

Device Application Note AN1005 91051

Device Application Note AN949 91214

General Information 91155

IRLI520G_RC, SiHLI520G_RC 90397

Package Reliability 91155

Silicon Technology Reliability 63402

IRLI520G, SiHLI520G Power MOSFET 90397