技术特性

• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;     f = 60 Hz)
• Sink to Lead Creepage Dist. = 4.8 mm

数据手册DataSheet 下载

• IRLI530G, SiHLI530G

Application Notes

• Application Note AN949 - Current Rating of Power Semiconductors

General Information

• General Information - Useful Web Links

RC Thermal Models

• IRLI530G_RC, SiHLI530G_RC - R-C Thermal Model Parameters

Reliability Data

• Package Reliability - Environmental and Package Testing Data for TO-220 FullPAK
• Silicon Technology Reliability - N-Channel Accelerated Operating Life Test Result

IRLI530G, SiHLI530G 91311

Device Application Note AN949 91214

General Information 91155

IRLI530G_RC, SiHLI530G_RC 91311

Package Reliability 91155

Silicon Technology Reliability 63402

IRLI530G, SiHLI530G Power MOSFET 91311