技术特性

• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;     f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm

数据手册DataSheet 下载

• IRLI630G, SiHLI630G

Application Notes

• Application Note AN949 - Current Rating of Power Semiconductors

General Information

• General Information - Useful Web Links

RC Thermal Models

• IRLI630G_RC, SiHLI630G_RC - R-C Thermal Model Parameters

Reliability Data

• Package Reliability - Environmental and Package Testing Data for TO-220 FullPAK
• Silicon Technology Reliability - N-Channel Accelerated Operating Life Test Result

IRLI630G, SiHLI630G 91313

Device Application Note AN949 91214

General Information 91155

IRLI630G_RC, SiHLI630G_RC 91313

Package Reliability 91155

Silicon Technology Reliability 63402

IRLI630G, SiHLI630G Power MOSFET 91313