技术特性

• Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolate package (2500 VAC/RMS)

数据手册DataSheet 下载

• VS-GA200SA60UP

Application Notes

• Application Note - Mounting Instructions for SOT-227 Modules

Package Drawings

• Outline Dimensions - SOT-227 Generation II

Packaging Information

• Packaging Information - SOT-227 Generation II

Product Literature

• Selector Guide - Power Modules: Standard Recovery Diode, Fast Recovery Diode, Schottky, Ultrafast, Thyristor, and IGBT

Published Articles

• Article - High Power and Hybrid Vehicles Increase Demand for Load Dump Protection by Soo Man (Sweetman) Kim (Autoelectronics.com, Oct 16 2008)

VS-GA200SA60UP 94364

Application Note 94856

Packaging Information 94856

Miscellaneous 93990

Selector Guide 93281

Article 94364

VS-GA200SA60UP Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A 94364