HMC-ALH216-DIE Low Noise Amplifier Chip, 14 - 27 GHz

The HMC-ALH216 is a GaAs MMIC HEMT Wideband Low Noise Amplifier die which operates between 14 and 27 GHz. The amplifier provides 18 dB of gain, 2.5 dB noise figure and +14 dBm of output power at 1 dB gain compression while requiring only 90 mA from a +4V supply voltage. The HMC-ALH216 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.

Applications
  • Point-to-Point Radios
  • Point-to-Multi-Point Radios
  • Military & Space
  • Test Instrumentation
Features and Benefits
  • Noise Figure: 2.5 dB @ 20 GHz
  • Gain: 18 dB
  • P1dB Output Power: +14 dBm
  • Supply Voltage: +4V @ 90 mA
  • Die Size: 2.25 x 1.58 x 0.1 mm
  • Amplifiers
    S-Parameters
    Data Sheets
    Documentnote
    HMC-ALH216 Data SheetPDF 544.48 K
    Application Notes
    Documentnote
    AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)PDF 804.11 K
    MMIC Amplifier Biasing Procedure Application NotePDF 435.1 K
    Broadband Biasing of Amplifiers General Application NotePDF 433.77 K
    Thermal Management for Surface Mount Components General Application NotePDF 189.99 K
    Order Information
    Part NumberPackagePacking QtyTemp RangePrice 100-499Price 1000+RoHS
    HMC-ALH216 ProductionCHIPS OR DIEOTH 5025C46.5437.7Y
    HMC-ALH216-SX ProductionCHIPS OR DIEOTH 2-55 to 85C00Y
    Reference Materials
    HMC-ALH216 Data Sheet hmc-alh216-die
    HMC-ALH216 S-Parameter hmc-alh216-die
    AN-1363: 利用有源偏置控制器满足外部偏置射频/微波放大器的偏置要求 (Rev. 0) hmc8120
    AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0) hmc8120
    MMIC Amplifier Biasing Procedure Application Note hmc1049lp5e
    Broadband Biasing of Amplifiers General Application Note hmc1049lp5e
    Thermal Management for Surface Mount Components General Application Note hmc1049lp5e
    38, 60 & 82 GHz MMICs for High Capacity Communication Links hmc-sdd112