HMC-APH196-DIE Medium Power Amplifier Chip, 17 - 30 GHz
The HMC-APH196 is a two stage GaAs HEMT MMIC Medium Power Amplifier which operates between 17 and 30 GHz. The HMC-APH196 provides 20 dB of gain at 20 GHz, and an output power of +22 dBm at 1 dB compression from a +4.5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.
The HMC-APH196 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Applications
- Point-to-Point Radios
- Point-to-Multi-Point Radios
- VSAT
- Military & Space
Features and BenefitsOutput IP3: +31 dBmP1dB: +22 dBmGain: 20 dB @ 20 GHzSupply Voltage: +4.5V50 Ohm Matched Input/OutputDie Size: 3.3 x 1.95 x 0.1 mm | |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC-APH196 Production | CHIPS OR DIE | OTH 25 | 25C | 66.59 | 53.94 | Y |
| HMC-APH196-SX Production | CHIPS OR DIE | OTH 2 | -55 to 85C | 0 | 0 | Y |
Reference Materials
