HMC-APH510-DIE Medium Power Amplifier Chip, 37 - 40 GHz
The HMC-APH510 is a high dynamic range, three stage GaAs HEMT MMIC Medium Power Amplifier which operates between 37 and 40 GHz. The HMCAPH510 provides 20 dB of gain, and an output power of +26 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.
The HMC-APH510 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Applications
- Point-to-Point Radios
- Point-to-Multi-Point Radios
- Military & Space
Features and BenefitsOutput IP3: +35 dBmP1dB: +26 dBmGain: 20 dBSupply Voltage: +5V50 Ohm Matched Input/OutputDie Size:
3.76 x 0.92 x 0.1 mm | |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC-APH510 Production | CHIPS OR DIE | OTH 25 | 25C | 16.58 | 13.7 | Y |
| HMC-APH510-SX Production | CHIPS OR DIE | REEL 2 | | 0 | 0 | Y |
Reference Materials
