HMC-APH608-DIE 1 Watt Power Amplifier Chip, 22.5 - 26.5 GHz

The HMC-APH608 is a high dynamic range, two stage GaAs HEMT MMIC 1 Watt Power Amplifier which operates between 22.5 and 26.5 GHz. The HMCAPH608 provides 17 dB of gain, and an output power of +30 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.

The HMC-APH608 GaAs HEMT MMIC 1 Watt Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

Applications

Point-to-Point Radios
Point-to-Multi-Point Radios
VSAT
Military & Space

Features and Benefits

Output IP3: +40 dBm

P1dB: +30 dBm

Gain: 17 dB

Supply Voltage: +5V

50 Ohm Matched Input/Output

Die Size: 4.49 x 1.31 x 0.1 mm

Amplifiers

RF Amplifiers

Data Sheets

Document	note
HMC-APH608 Data Sheet	PDF 560.64 K

Application Notes

Document	note
AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)	PDF 804.11 K
MMIC Amplifier Biasing Procedure Application Note	PDF 435.1 K
Broadband Biasing of Amplifiers General Application Note	PDF 433.77 K
Thermal Management for Surface Mount Components General Application Note	PDF 189.99 K