HMC-XDB112 x2 Passive Frequency Multiplier Chip, 20 - 30 GHz Output

The HMC-XDB112 is a monolithic Passive Frequency Doubler which utilizes GaAs Heterojunction Bipolar Transistor (HBT) technology, and is targeted to high volume applications where frequency doubling of a lower frequency is more economical than directly generating a higher frequency. All bond pads and the die backside are Ti/Au metallized and the HBT devices are fully passivated for reliable operation.

The HMC-XDB112 Passive Doubler MMIC is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

Applications
  • Point-to-Point Radios
  • VSAT
  • Test Instrumentation
  • Military & Space
  • Clock Generation
Features and Benefits
  • Conversion Loss: 13 dB
  • Passive: No DC Bias Required
  • Input Drive: +13 dBm
  • High Fo Isolation: 30 dB
  • Die Size: 2.2 x 0.65 x 0.1 mm
RF & Microwave
Data Sheets
Documentnote
HMC-XDB112 Data SheetPDF 509.79 K
Order Information
Part NumberPackagePacking QtyTemp RangePrice 100-499Price 1000+RoHS
HMC-XDB112 ProductionCHIPS OR DIEOTH 2525C33.6327.24Y
Reference Materials
HMC-XDB112 Data Sheet hmc-xdb112
38, 60 & 82 GHz MMICs for High Capacity Communication Links hmc-sdd112