HMC1087-Die 8 Watt GaN MMIC Power Amplifier, 2 - 20 GHz _ BDTIC a Leading Distributor in China

HMC1087-Die 8 Watt GaN MMIC Power Amplifier, 2 - 20 GHz

The HMC1087 is an 8W Gallium Nitride (GaN) MMIC Power Amplifier which operates between 2 and 20 GHz. The amplifier typically provides 11dB of small signal gain, +39 dBm of saturated output power, and +45 dBm output IP3 at +29 dBm output power per tone. The HMC1087 draws 850 mA quiescent current from a +28V DC supply. The RF I/Os are matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All electrical performance data was aquired with the die eutectically attached to 1.02 mm (40 mil) thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission lines on alumina.

Applications

Test Instrumentation
General Communications
Radar

Features and Benefits

High Psat: +39 dBm

Power Gain at Psat: +5.5 dB

High Output IP3: +45 dBm

Small Signal Gain: 11 dB

Supply Voltage: +28V @ 850 mA

50 Ohm Matched Input/Output

Die Size: 2 x 4 x 0.1 mm

Amplifiers

Power Amplifiers

S-Parameters

HMC1087 Die S-Parameters .ZIP

Data Sheets

Document	note
HMC1087 Die Data Sheet	PDF 863.32 K

Application Notes

Document	note
AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)	PDF 804.11 K
MMIC Amplifier Biasing Procedure Application Note	PDF 435.1 K
Broadband Biasing of Amplifiers General Application Note	PDF 433.77 K
Thermal Management for Surface Mount Components General Application Note	PDF 189.99 K