HMC1087F10 8 Watt GaN Flange Mount MMIC Power Amplifier, 2 - 20 GHz

The HMC1087F10 is an 8W Gallium Nitride (GaN) MMIC Power Amplifier which operates between 2 and 20 GHz, and is provided in a 10-lead flange mount package. The amplifier typically provides 11 dB of small signal gain, +39 dBm of saturated output power, and +43.5 dBm output IP3 at +28 dBm output power per tone. The amplifier draws 850 mA quiescent current from a +28V DC supply. The RF I/Os are matched to 50 Ohms for ease of use.

Applications

Test Instrumentation
General Communications
Radar

Features and Benefits

High Psat: +38.5 dBm

Power Gain at Psat: +6.5 dB

High Output IP3: +43.5 dBm

Small Signal Gain: 11 dB

Supply Voltage: +28V @ 850 mA

50 Ohm Matched Input/Output

10-Lead Flange Package

Amplifiers

Power Amplifiers

Data Sheets

Document	note
HMC1087F10 Data Sheet	PDF 926.34 K

Application Notes

Document	note
AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)	PDF 804.11 K
MMIC Amplifier Biasing Procedure Application Note	PDF 435.1 K
Broadband Biasing of Amplifiers General Application Note	PDF 433.77 K
Thermal Management for Surface Mount Components General Application Note	PDF 189.99 K

Order Information

Part Number	Package	Packing Qty	Temp Range	Price 100-499	Price 1000+	RoHS
HMC1087F10 Production	MODULE WITH HEAT SINK	OTH 1	-40 to 85C	443.3	388.3	Y

Datasheet: HMC1087F10 Data Sheet hmc1087f10






Other: AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0) hmc8120; AN-1363: 利用有源偏置控制器满足外部偏置射频/微波放大器的偏置要求 (Rev. 0) hmc8120; Broadband Biasing of Amplifiers General Application Note hmc1049lp5e; MMIC Amplifier Biasing Procedure Application Note hmc1049lp5e; Thermal Management for Surface Mount Components General Application Note hmc1049lp5e