HMC1087F10 8 Watt GaN Flange Mount MMIC Power Amplifier, 2 - 20 GHz

The HMC1087F10 is an 8W Gallium Nitride (GaN) MMIC Power Amplifier which operates between 2 and 20 GHz, and is provided in a 10-lead flange mount package. The amplifier typically provides 11 dB of small signal gain, +39 dBm of saturated output power, and +43.5 dBm output IP3 at +28 dBm output power per tone. The amplifier draws 850 mA quiescent current from a +28V DC supply. The RF I/Os are matched to 50 Ohms for ease of use.

Applications
  • Test Instrumentation
  • General Communications
  • Radar
Features and Benefits
  • High Psat: +38.5 dBm
  • Power Gain at Psat: +6.5 dB
  • High Output IP3: +43.5 dBm
  • Small Signal Gain: 11 dB
  • Supply Voltage: +28V @ 850 mA
  • 50 Ohm Matched Input/Output
  • 10-Lead Flange Package
  • Amplifiers
    Data Sheets
    Documentnote
    HMC1087F10 Data SheetPDF 926.34 K
    Application Notes
    Documentnote
    AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)PDF 804.11 K
    MMIC Amplifier Biasing Procedure Application NotePDF 435.1 K
    Broadband Biasing of Amplifiers General Application NotePDF 433.77 K
    Thermal Management for Surface Mount Components General Application NotePDF 189.99 K
    Order Information
    Part NumberPackagePacking QtyTemp RangePrice 100-499Price 1000+RoHS
    HMC1087F10 ProductionMODULE WITH HEAT SINKOTH 1-40 to 85C443.3388.3Y
    HMC1087F10 Data Sheet hmc1087f10
    AN-1363: 利用有源偏置控制器满足外部偏置射频/微波放大器的偏置要求 (Rev. 0) hmc8120
    AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0) hmc8120
    MMIC Amplifier Biasing Procedure Application Note hmc1049lp5e
    Broadband Biasing of Amplifiers General Application Note hmc1049lp5e
    Thermal Management for Surface Mount Components General Application Note hmc1049lp5e