HMC326 InGaP HBT Driver Amplifier SMT, 3.0 - 4.5 GHz
The HMC326MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifier which operates between 3 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dB of gain and +26 dBm of saturated power from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40% PAE.
Applications
- Microwave Radios
- Broadband Radio Systems
- Wireless Local Loop Driver Amplifier
Features and BenefitsPsat Output Power: +26 dBm> 40% PAEOutput IP3: +36 dBmHigh Gain: 21 dBVs: +5VUltra Small Package: MSOP8G | S-Parameters |
Data Sheets
Application Notes
Order Information
Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
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HMC326MS8G Production | 8 ld MSOP_EP | OTH 50 | -40 to 85C | 6.49 | 5.26 | N |
HMC326MS8GE Production | 8 ld MSOP_EP | OTH 50 | -40 to 85C | 5.46 | 4.46 | Y |
HMC326MS8GETR Production | 8 ld MSOP_EP | REEL 500 | -40 to 85C | 5.46 | 4.46 | Y |
HMC326MS8GTR Production | 8 ld MSOP_EP | REEL 500 | -40 to 85C | 6.49 | 5.26 | N |
Evaluation Boards
Part Number | Description | Price | RoHS |
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104356-HMC326MS8G | Evaluation Board - HMC326MS8G Evaluation PCB | 332.2 | Y |
Reference Materials