HMC327 MMIC Power Amplifier SMT, 3 - 4 GHz
The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.
Applications
Features and BenefitsGain: 21 dBSaturated Power: +30 dBm45% PAESupply Voltage: +5VPower Down CapabilityLow External Part Count | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC327MS8G Last Time Buy | 8 ld MSOP_EP | OTH 50 | -40 to 85C | 12.41 | 10.05 | N |
| HMC327MS8GE Production | 8 ld MSOP_EP | OTH 50 | -40 to 85C | 9.36 | 7.66 | Y |
| HMC327MS8GETR Production | 8 ld MSOP_EP | REEL 500 | -40 to 85C | 9.36 | 7.66 | Y |
| HMC327MS8GTR Last Time Buy | 8 ld MSOP_EP | REEL 500 | -40 to 85C | 12.41 | 10.05 | N |
Evaluation Boards
| Part Number | Description | Price | RoHS |
|---|
| 104991-HMC327MS8G | Evaluation Board - HMC327MS8G Evaluation PCB | 339.64 | Y |
Reference Materials
