HMC405-DIE InGaP HBT Gain Block Amplifier Chip, DC - 10 GHz

The HMC405 die is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC DC to 10 GHz amplifier. This amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power. The HMC405 offers 16 dB of gain and an output IP3 of +32 dBm while requiring only 50 mA from a +5V supply.

The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC405 can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (0.22mm²) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.5mm (20 mils).

Applications
  • Microwave & VSAT Radios
  • Test Equipment
  • Military EW, ECM, C³I
  • Space Telecom
Features and Benefits
  • Gain: 16 dB
  • P1dB Output Power: +13 dBm
  • Stable Gain Over Temperature
  • 50 Ohm I/O’s
  • Small Size: 0.38 x 0.58 x 0.1 mm
  • Amplifiers
    S-Parameters
    Data Sheets
    Documentnote
    HMC405 Data SheetPDF 538.7 K
    Application Notes
    Documentnote
    AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)PDF 804.11 K
    Order Information
    Part NumberPackagePacking QtyTemp RangePrice 100-499Price 1000+RoHS
    HMC405 ProductionCHIPS OR DIEOTH 50-55 to 85C15.3212.66Y
    HMC405-SX ProductionCHIPS OR DIEOTH 2-55 to 85C00Y
    Reference Materials
    HMC405 Data Sheet hmc405-die
    HMC405 S-Parameter hmc405-die
    AN-1363: 利用有源偏置控制器满足外部偏置射频/微波放大器的偏置要求 (Rev. 0) hmc8120
    AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0) hmc8120
    Semiconductor Qualification Test Report: GaAs HBT-B (QTR: 2013-00229) hmc311sc70