HMC406 InGaP HBT Power Amplifier SMT, 5 - 6 GHz
The HMC406MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 6 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 17 dB of gain and +29 dBm of saturated power at 38% PAE from a +5V supply voltage. Vpd can be used for full power down or RF output power/current control.
Applications
- UNII
- HiperLAN & 802.11a WLAN
Features and BenefitsGain: 17 dBSaturated Power: +29 dBm38% PAESupply Voltage: +5VPower Down CapabilityLow External Part Count | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC406MS8G Obsolete | 8 ld MSOP_EP | OTH 50 | -40 to 85C | 0 | 0 | N |
| HMC406MS8GE Production | 8 ld MSOP_EP | OTH 50 | -40 to 85C | 8.94 | 7.31 | Y |
| HMC406MS8GETR Production | 8 ld MSOP_EP | REEL 500 | -40 to 85C | 8.94 | 7.31 | Y |
| HMC406MS8GTR Obsolete | 8 ld MSOP_EP | REEL 500 | -40 to 85C | 0 | 0 | N |
Evaluation Boards
| Part Number | Description | Price | RoHS |
|---|
| 104989-HMC406MS8G | Evaluation Board - HMC406MS8G Evaluation PCB | 274.99 | Y |
Reference Materials
